SiCウエハー｜製品一覧｜製品案内｜半導体シリコン素材の専門商社：株式会社トリニティー

SiCウエハー

SiC（炭化ケイ素，シリコンカーバイド）は、ケイ素（Si）と炭素（C）の化合物です。
パワー半導体に欠かせないSiCウエハーは電力効率に優れ、自動車などのパワー半導体デバイスに利用されています。
次世代を担う基板として期待されており、トリニティーでは高品質なSiCウェハーを用途に合わせてご提供させて頂きます。

■6inch 4H-N スペック　350um

Parameter	Unit	Specification
Grade		Production	Research	Dummy
Size		6inch
Diameter	mm	150±0.2		150±0.5
Thickness	μm	350±25		350±40
Polytype		4H-SiC
Surface Orientation		4.0° toward<11`20>±0.5°		N/A
Dopant		Nitrogen
Resistivity	Ω・cm	0.017～0.025	0.015～0.025	N/A
Primary Flat Orientation		{10 10}±1.0°		N/A
Primary Flat Length	mm	47.5±1.5		N/A
LTV-Max	μm	≤2	≤3	≤5
TTV	μm	≤5	≤8	≤10
Bow	μm	0±10	0±15	0±30
Warp	μm	≤15	≤25	≤60
Micropipe Density	cm-2	≤0.1	≤0.2	≤1
TED	cm-2	<2000	<6000	<10000
BPD	cm-2	<500	<1000	<3000
TSD	cm-2	<100	<500	<3000
BSF/SF	%area	<1%		N/A
Metal Contamination	atoms / cm2	<1E11		<1E12
Back Scratch by high intensity light		None		N/A
Surface Roughness	nm	C-face:mirror polished, Ra<3.0
Surface Roughness	nm	Si-face:CMP, Ra<0.2
Foreign Polytypes*		None		≤5mm
Polycrystal*		None		≤5mm
Hex Platesby High Intensity Light*		None		≤5mm
Pinholes	number	None		N/A
Cracks*	number	None		≤3mm
Edge chip	number	None
Si Scratchon Siface	mm	Cumulative scratch length<50	Cumulative scratch length<100	Cumulative scratch length<250
Stain(both faces)	mm	None

*Defects limits apply to entire wafer surface including the edg eexclusion area.
Product with other specifications can be customized.

■6inch 4H-SI スペック　500um

Parameter	Unit	Specification
Grade		Production	Research	Dummy
Size		6inch
Diameter	mm	150±0.2		150±0.5
Thickness	μm	500±25		500±40
Polytype		4H-SiC
Surface Orientation		<0001>±0.2°		<0001>±0.5°
(0004)FWHM	arcsec	≤80 arcsec	≤100 arcsec	N/A
Resistivity	Ω・cm	≥1E9	≥1E8	≥1E5
Primary Flat Orientation		{10 10}±1.0°		N/A
notch	mm	1-1.5		0.5-2.0
LTV-Max	μm	≤2	≤3	≤5
TTV	μm	≤5	≤8	≤15
Bow	μm	0±15	0±20	0±30
Warp	μm	≤25	≤30	≤45
Micropipe Density	cm-2	≤0.15	≤0.5	≤5
Metal Contamination	atoms / cm2	<1E11	<1E12
Back Scratch by high intensity light		None		N/A
Surface Roughness	nm	C-face:mirror polished, Ra<3.0
Surface Roughness	nm	Si-face:CMP, Ra<0.2
Foreign Polytypes*		None	≤3mm	≤5mm
Polycrystal*		None	≤3mm	≤5mm
Hex Platesby High Intensity Light*		None	≤3mm	≤5mm
Pinholes	number	None	1 allowed	N/A
Cracks*	number	None	≤3mm	≤3mm
Edge chip	number	None	2 allowed, <1.0mm width & depth
Si Scratchon Siface	mm	Cumulative scratch length<50	Cumulative scratch length<100	Cumulative scratch length<250
Stain(both faces)	mm	None

*Defects limits apply to entire wafer surface including the edg eexclusion area.
Product with other specifications can be customized.

■8inc 4H-N SiC 基板仕様

Parameter	Unit	Specification
Grade		Production	Research	Dummy
Size		8inch
Diameter	mm	200±0.2		200±0.5
Thickness	μm	350±25 / 500±25		350±40 / 500±40
Polytype		4H-N
Surface Orientation		4.0° toward<11`20>±0.5°		N/A
Dopant		Nitrogen
Resistivity	Ω・cm	0.015～0.028	0.015～0.028	N/A
Primary Flat Orientation		{10 10}±1.0°		N/A
notch	mm	1-1.5		0.5-2.0
LTV-Max	μm	≤2	≤3	≤5
TTV	μm	≤5	≤8	≤10
Bow	μm	0±20	0±25	0±30
Warp	μm	≤25	≤40	≤60
Micropipe Density	cm-2	≤0.2	≤0.5	≤5
TED	cm-2	<3000	<6000	<10000
BPD	cm-2	<600	<1000	<3000
TSD	cm-2	<200	<500	<3000
BSF/SF	%area	<1%		N/A
Metal Contamination	atoms / cm2	<1E11		<1E12
Back Scratch by high intensity light		None		N/A
Surface Roughness	nm	C-face:mirror polished, Ra<3.0
Surface Roughness	nm	Si-face:CMP, Ra<0.2
Foreign Polytypes*		None		Allowed within 5mm edge exclusion area
Polycrystal*		None		Allowed within 5mm edge exclusion area
Hex Platesby High Intensity Light*		None		Allowed within 5mm edge exclusion area
Pinholes	number	None		N/A
Cracks*	number	None		Allowed within 3mm edge exclusion area
Edge chip	number	None
Si Scratchon Siface	mm	Cumulative scratch length<50	Cumulative scratch length<100	Cumulative scratch length<250
Stain(both faces)	mm	None

*Defects limits apply to entire wafer surface including the edg eexclusion area.
Product with other specifications can be customized.

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